preliminary solid state devices, inc. SFF9130-28D features: data sheet #: fp0035d maximum ratings v gs 20 volts gate to source voltage i d -11 -7 continuous drain current drain to source voltage v ds -100 amps volts watts ? rugged construction with poly silicon gate ? low rds (on) and high transconductance ? excellent high temperature stability ? very fast switching speed ? fast recovery and superior dv/dt performance ? increased reverse energy capability ? low input transfer capacitance for easy paralleling ? hermetically sealed surface mount package ? tx, txv and space level screening available ? replaces: 2x irf9130 types 28 pin clcc -11 amp -100 volts 0.30 s dual uncommited p-channel power mosfet total device dissipation p d 36 37 thermal resistance, junction to case (both) r 2 jc t op & t stg -55 to +150 operating and storage temperature o c designer's data sheet note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. o c/w 3.5 characteristic symbol value unit package outline: 28 pin clcc pin out: source (1): 16 - 21 drain (1): 24 - 28 gate (1): 22 source (2): 9 - 14 drain (2): 2 - 6 gate (2): 8 note: all drain/source pins must be connected on the pc board in order to maximize current carrying capability and to minimize rds (on) t c = 25 o c t c = 100 o c t c = 25 o c t c = 55 o c e as 84 mj single pulse avalange energy e ar 7.5 mj repetitive avalange energy 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773
solid state devices, inc. SFF9130-28D preliminary electrical characteristics @ t j =25 o c (unless otherwise specified) v drain to source breakdown voltage (vgs =0 v, id =1ma) - bv dss - rating symbol min typ max unit -100 s drain to source on state resistance 1/ (vgs = -10 v) - - r ds(on) 0.30 0.35 - - v gate threshold voltage (vds =vgs, id =250 : a) - v gs(th) -4.0 -2.0 s( ) forward transconductance (vds > id(on) x rds (on) max, ids = 7a) 5.0 gf s - 3.0 : a zero gate voltage drain current (vds = 80% rated vds, vgs =0 v, t a = 25 o c ) (vds = 80% rated vds, vgs =0 v, t a = 125 o c ) - - i dss - - gate to source leakage forward gate to source leakage reverse - - i gss -100 100 - - at rated vgs total gate charge gate to source charge gate to drain charge vgs = -10 volts 50% rated vds id = -11a qg qgs qgd 15 1 2 26 3 14 29 7.1 21 nsec turn on delay time rise time turn off delay time fall time vdd = 50% of rated vds id = 11a rg = 7.5 s t d (on) tr t d (off) tf - - - - 15 10 30 12 60 140 140 140 v - v sd -4.7 - diode reverse recovery time reverse recovery charge 125 - t rr q rr 250 3 - - tj = 25 o c if = 10a di/dt = 100a/ : sec input capacitance output capacitance reverse transfer capacitance vgs = 0 volts vds = -25 volts f = 1 mhz ciss coss crss - - - 860 350 125 - - - pf nsec : c for thermal derating curves and other characteristic curves please contact ssdi marketing department. diode forward voltage (i s = rated i d , v gs = 0v, t j = 25 o c) nc na -25 250 i d = 7a i d = 11a notes: 1/ all package pins of the same terminations (drain/source/gate) must be connected together to minimize r ds(on) and maximize current carrying capability. v temperature coefficient of breakdown voltage 0.87 ) bv dss ) t j - - 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773
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